660nm
660nm 7mW VCSEL Bare Die
660nm 7mW class six-emitter VCSEL bare die for high-output red optical-source packaging, wire bonding, ceramic-submount assembly and module development.
Specifications
- Product Type
- Multi-mode VCSEL Bare Die
- Wavelength
- 660 nm typ.
- Optical Output Power
- 7mW class, 7.5mW typ. @ IF = 15mA
- Emitter Configuration
- 6 Emitters
- Operating Mode
- QCW, 0.5ms Pulse Width, 1% Duty Cycle
- Die Size
- 163±10 μm × 185±10 μm
- Recommended Assembly
- Die Attach / Wire Bonding / Ceramic Submount / Custom Packaging
1. 660nm 7mW VCSEL Bare Die for Six-Emitter Red Optical-Source Development
The 660nm 7mW VCSEL Bare Die is a six-emitter, multi-mode visible-red chip for higher-output laser packaging, wire bonding, ceramic-submount assembly and custom optical-source development. The source datasheet lists 5.0mW minimum, 7.5mW typical and 10mW maximum optical output at 15mA and 25°C QCW.
As an unpackaged semiconductor die, it requires a customer-selected package, electrical drive, thermal path, optical design and complete finished-device validation.
2. Source-Specified Optical and Electrical Characteristics
At the stated 15mA, 25°C QCW condition, the source lists a 660nm typical center wavelength with a 655-665nm wavelength range, 4.0mA typical threshold current, 2.35V typical forward voltage and 20° typical divergence.
The source specifies a 163±10μm x 185±10μm die, 130±10μm thickness, 87±3μm x 85±3μm bond pads and a back electrode matching the listed die size.
3. Bare-Die Assembly and Packaging Direction
The six-emitter configuration and symmetric donut-shaped source far field should be evaluated with the intended attachment method, bond layout, optics, working distance, pulse drive and thermal management.
For other 660nm bare-die output options, review the complete 660nm VCSEL Bare Die Series.
4. Evaluation Kit, Documentation and Custom Development Support
For early-stage bare-die assembly and optical evaluation, a 10 pcs / KIT evaluation quantity can be requested for the stated 15mA QCW test condition.
For die attach, bonding, ceramic-submount, package configuration or higher-output optical-source requirements, submit the application conditions and target operating parameters for engineering review.
For component-level project evaluation, an Initial Product Report covering the Laser Diode Series and VCSEL Laser Diode Chip Series has been filed with the U.S. FDA CDRH. This filing supports technical documentation and product evaluation.
For applicable products, CE, EMC, EN 60825, LVD, RoHS, REACH and halogen-free certification and compliance documents are available. Documentation depends on the corresponding product model and does not represent certification of the customer's finished device.
5. Frequently Asked Questions
FAQ 1. What output is specified for this 660nm 7mW VCSEL bare die?
The source lists 5.0mW minimum, 7.5mW typical and 10mW maximum optical output at 15mA and 25°C QCW. Finished-module output must be measured after integration.
FAQ 2. How many emitters are specified for this die?
The product specification identifies six emitters. Package, optics, alignment, drive and thermal design determine the finished optical performance.
FAQ 3. Does the source divergence define the finished beam?
No. The listed 20° typical divergence describes the source condition. The finished beam depends on optical design and the complete integrated system.
