1064nm
1064nm 3W VCSEL Bare Die
1064nm 3W high-power VCSEL bare die with 624 emitters for CW or QCW source development, ceramic packaging, thermal validation and optical modules.
Specifications
- Product Type
- Multi-mode VCSEL Bare Die
- Wavelength
- 1064 nm typ.
- Optical Output Power
- 2.9W min. / 3.1W typ.
- Emitter Configuration
- 624 Emitters
- Operating Mode
- CW / QCW, depending on model
- Die Size
- 1075±10μm × 1120±10μm
- Recommended Assembly
- Die Attach / Wire Bonding / Ceramic Submount / Custom Packaging
1. 1064nm 3W High-Power VCSEL Bare Die for Ceramic Packaging and Module Integration
The 1064nm 3W High-Power VCSEL Bare Die is a multi-emitter, multi-mode VCSEL chip developed for high-current semiconductor packaging, ceramic-submount assembly and watt-level near-infrared optical-module integration. The device contains 624 emitters and provides 2.9W minimum and 3.1W typical optical output at IF = 3.5A under the published QCW test condition at 25°C.
Its 1075 ±10μm × 1120 ±10μm die dimensions, 624-emitter array and watt-level optical output position this model for high-power NIR illumination, active optical detection and custom optical-module development.
This high-power 1064nm VCSEL bare die is intended for:
- OSAT semiconductor assembly and test providers
- High-current VCSEL and laser-diode packaging companies
- Die-attach and multiple-wire-bonding engineering teams
- Ceramic-submount and chip-on-submount integrators
- High-power NIR optical-module manufacturers
- Thermal-management and heatsink-development teams
- Machine-vision and active-illumination companies
- Industrial optical-source and inspection companies
- Lens, diffuser and beam-shaping companies
- Laser-component distributors and second-source development teams
As an unpackaged semiconductor die, this product requires suitable die attachment, multiple wire bonds, electrical driving, package protection, thermal management and optical integration. It is not supplied as a finished SMD device, COB source, packaged laser or complete optical module.
2. Optical Configuration and Packaging Direction
The 1064nm 3W High-Power VCSEL Bare Die uses a 624-emitter array for watt-level near-infrared source development. The device is suitable for CW or QCW application development, while the published electrical and optical values must be evaluated according to the stated QCW test condition.
Parameter | Value |
|---|---|
Optical Output Power | 2.9W min. / 3.1W typ. at IF = 3.5A |
Center Wavelength | 1064nm typ. |
Specified Wavelength Range | 1060nm min. / 1064nm typ. / 1074nm max. |
Application Operating Mode | CW / QCW capable |
Published Test Condition | IF = 3.5A, 25°C, QCW model |
Emitter Configuration | 624 emitters |
Forward Voltage | 2.0V min. / 2.2V typ. / 2.4V max. at IF = 3.5A |
Threshold Current | 500mA typ. / 650mA max. |
Differential Resistance | 0.2Ω typ. |
Slope Efficiency | 1.0W/A min. / 1.1W/A typ. |
Power Conversion Efficiency | 38% min. / 41% typ. at IF = 3.5A |
Beam Divergence | 18° min. / 20° typ. / 22° max. at 1/e² |
Specified Emitting Aperture | 100 ±10μm |
Die Size | 1075 ±10μm × 1120 ±10μm |
Die Thickness | 125 ±5μm |
Anode Pad Structure | Two pads, each 100 ±10μm × 1060 ±10μm |
Backside Cathode Area | 1075 ±10μm × 1120 ±10μm |
The device can be evaluated for conductive die attachment, multiple gold wire bonds, high-current ceramic-submount assembly, chip-on-submount integration and application-specific laser packages. Package design should account for the large die area, dual-anode pad structure, backside cathode, die-attach material, bond-wire current capacity, thermal path and optical alignment.
The stated 3.1W typical value is a component-level result under the published QCW test condition. The device can support CW or QCW application development, but continuous-wave output, package temperature, reliability and usable system performance must be validated using the completed package, driver, heatsink, cooling structure, optics and module architecture.
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3. Packaging, Optical Module and Application Development
OSAT and Custom High-Power VCSEL Packaging
The 1064nm 3W High-Power VCSEL Bare Die supports large-area die attachment, multiple gold wire bonds, ceramic-submount assembly and custom semiconductor-laser package development. Applicable packaging directions include:
- Large-area VCSEL die attachment and bond-line evaluation
- Multiple gold wire-bonding process development
- High-current ceramic-submount assembly
- Chip-on-submount high-power optical sources
- Application-specific laser packages
- Custom VCSEL array packaging
- CW or QCW source-package development
- High-power NIR optical modules
The 624-emitter array, 3.5A drive condition and watt-level output require suitable current delivery, dual-anode bonding, die attachment and a controlled junction-to-heatsink thermal path. Die-attach material, bond configuration, ceramic substrate, package protection and cooling design must be validated under the intended CW or QCW operating conditions.
Lens and Optical Module Integration
The device can support optical companies and module-development teams working on integrated high-output 1064nm near-infrared sources using:
- Collimation-lens assemblies
- Diffuser-integrated high-power NIR sources
- Beam-shaping and homogenization components
- Lens-integrated ceramic packages
- High-output near-infrared illumination modules
- Machine-vision auxiliary sources
- Application-specific high-power optical assemblies
Optical integration should be validated using the actual far-field distribution, 20° typical beam divergence, emitter-array dimensions, package position, lens spacing, diffuser characteristics, operating temperature and complete module architecture. A typical divergence value alone does not define the final spot size, irradiance distribution or usable optical field.
Downstream Application Development
The 1064nm 3W High-Power VCSEL Bare Die can support component-level development and engineering evaluation for:
- High-power near-infrared illumination
- Active optical detection
- Machine-vision support illumination
- Industrial optical-source assemblies
- Industrial inspection systems
- Camera-related NIR source development
- CW and QCW package evaluation
- Engineering and research optical sources
- Custom high-power VCSEL modules
These are downstream development directions after the bare die has been integrated into a suitable electrical, thermal, mechanical and optical system. The VCSEL bare die is not a finished sensing or illumination device and does not independently establish system performance, laser-safety classification or regulatory approval.
The finished-device developer must independently validate the driver condition, optical output, package temperature, beam distribution, working distance, laser classification, electrical safety and complete-system requirements.
4. Evaluation Kit and Documentation Support
The 1064nm 3W High-Power VCSEL Bare Die can be evaluated for large-area die-attach trials, multiple-wire-bonding verification, ceramic-submount development, high-current driver testing, thermal-path evaluation and initial high-power optical-module integration.
The Evaluation Kit includes 10 pcs / KIT per selected model:
- 1064nm 3W High-Power VCSEL Bare Die
- Corresponding product datasheet
- Corresponding die-dimension documentation
- International shipping quoted according to destination
The following requirements can be discussed according to the project:
- Center wavelength and wavelength tolerance
- Optical output and power-bin selection
- Emitter configuration and chip layout
- CW or QCW driver and operating requirements
- Die attachment, multiple-wire bonding and ceramic-submount design
- Thermal path, heatsink and package configuration
- Lens, diffuser and optical-module integration
- Volume-supply requirements
For component-level project evaluation, an Initial Product Report covering the Laser Diode Series and VCSEL Laser Diode Chip Series has been filed with the U.S. FDA CDRH. This filing supports technical documentation and product evaluation.
For applicable products, CE, EMC, EN 60825, LVD, RoHS, REACH and halogen-free certification and compliance documents are available. Documentation depends on the corresponding product model and does not represent certification of the customer's finished device.
5. Frequently Asked Questions
FAQ 1. What packaging and operating conditions are required for the 1064nm 3W VCSEL Bare Die?
The device is supplied as an unpackaged semiconductor die and requires conductive die attachment, multiple top-side wire bonds, ESD-controlled handling, package-level protection and a suitable thermal path. Its published 2.9W minimum and 3.1W typical optical output values are measured at IF = 3.5A and 25°C under a QCW model. Continuous-wave operation requires separate validation of current delivery, die attachment, bond-wire capacity, heatsink performance, cooling structure and package temperature.
FAQ 2. When should I select the 1064nm 3W device instead of the 20mW or 30mW model?
The 3W model is intended for watt-level optical-source development and projects that can support its 624-emitter array, 3.5A drive current, dual-anode pad structure and more demanding thermal package. The 20mW and 30mW devices are more suitable when compact die dimensions, lower drive current and lower optical output are required. Projects requiring a completed packaged source, integrated heatsink or optical module should follow a separate custom package or module-development path.
FAQ 3. Can the 1064nm 3W VCSEL Bare Die be evaluated for CW and QCW optical-module projects?
Yes. The device can support component-level evaluation for high-power NIR illumination, active optical detection, machine-vision support and custom high-power optical modules. The published output values are based on the stated QCW test condition, while CW development requires separate electrical and thermal validation. Engineering evaluation should cover current delivery, die-attach quality, dual-anode bonding, heatsink interface, package temperature, beam divergence, lens or diffuser position and complete optical-module architecture.
