1064nm
1064nm 30mW VCSEL Bare Die
1064nm 30mW VCSEL bare die with six emitters and 30mW typical QCW output at 35mA, 25°C, 0.5ms pulses and 1% duty for compact NIR package integration.
Specifications
- Product Type
- Multi-mode VCSEL Bare Die
- Wavelength
- 1064 nm typ.
- Optical Output Power
- 25mW min. / 30mW typ.
- Emitter Configuration
- 6 Emitters
- Operating Mode
- QCW / Pulse
- Die Size
- 163±10μm × 185±10μm
- Recommended Assembly
- Die Attach / Wire Bonding / Ceramic Submount / Custom Packaging
1. 1064nm 30mW VCSEL Bare Die for Packaging and Module Integration
The 1064nm 30mW VCSEL Bare Die is an unpackaged six-emitter VCSEL chip for compact semiconductor packaging, ceramic-submount assembly and near-infrared optical-source integration requiring more mW-level output than the adjacent 20mW option.
At IF = 35mA and 25°C under QCW operation with a 0.5ms pulse width and 1% duty cycle, the device provides 25mW minimum and 30mW typical optical output power. The wavelength specification is 1060nm minimum and 1064nm typical.
The device uses a 163 ± 10μm × 185 ± 10μm rectangular die with six emitters. Its 115 ± 3μm × 80 ± 3μm top anode pad and full-footprint backside cathode create a different package-orientation and wire-bonding requirement from the square four-emitter 20mW die.
This component can be evaluated by:
- OSAT semiconductor assembly and test providers
- VCSEL and laser-diode packaging companies
- Rectangular-die placement and wire-bonding teams
- Ceramic-submount and chip-on-submount integrators
- Machine-vision optical-source developers
- Sensor light-source development teams
- Consumer-electronics optical-module engineers
- Industrial optical-source integrators
- Laser-component distributors and alternative-source engineering teams
The device is supplied as a bare semiconductor die, not as a packaged laser or finished optical module. Production use requires a validated die-attach process, top-side wire bonding, backside electrical contact, ESD protection, package structure, pulse driver and external optics.
2. Optical Configuration and Packaging Direction
The 1064nm 30mW VCSEL Bare Die uses six emitters on a rectangular chip and is characterized at a 35mA QCW test point. Its higher mW-level output within this two-product pair must be considered together with the die orientation, elongated anode pad and package electrical path.
Parameter | Value | Test Condition or Note |
|---|---|---|
Optical Output Power | 25mW min. / 30mW typ. | IF = 35mA |
Wavelength | 1060nm min. / 1064nm typ. | No maximum value is specified |
Operating Condition | QCW / Pulse | 25°C, 0.5ms pulse width, 1% duty cycle |
Emitter Configuration | 6 emitters | Six-emitter die layout |
Threshold Current | 4.0mA typ. | — |
Forward Voltage | 2.0V typ. | IF = 35mA |
Slope Efficiency | 0.8W/A min. / 0.9W/A typ. | — |
Power Conversion Efficiency | 41% typ. | IF = 35mA |
Beam Divergence | 21° typ. | 1/e² definition, IF = 35mA |
Die Size | 163 ± 10μm × 185 ± 10μm | Rectangular footprint |
Die Thickness | 130 ± 10μm | — |
Top Anode Pad | 115 ± 3μm × 80 ± 3μm | Top-side wire-bond access |
Backside Cathode | 163 ± 10μm × 185 ± 10μm | Covers the die footprint |
The 30mW typical output is specified only at the stated 35mA QCW test point. It is not a continuous-wave rating, and operation outside the published pulse, duty-cycle or temperature condition requires separate electrical, optical and package-level evaluation.
The unequal X/Y die dimensions and the 115 ± 3μm × 80 ± 3μm anode pad should be reflected in placement orientation, bond-tool access and optical-axis planning. The datasheet supplies the mechanical dimensions but does not prescribe the die-attach material, bond-wire process or final package architecture.
Compared with the 20mW device, this model adds two emitters and raises the published test current from 25mA to 35mA. The output increase therefore comes with a different chip layout and driver test point, not simply an interchangeable power-bin change.
3. Packaging, Optical Module and Application Development
OSAT and Custom Laser Packaging
Packaging development for the six-emitter 30mW die should begin with rectangular-die orientation and reliable access to the elongated top anode pad.
Relevant engineering work can include:
- Placement control for the 163 ± 10μm × 185 ± 10μm die
- Conductive die attachment using the full-footprint backside cathode
- Top-side wire-bonding trials for the 115 ± 3μm × 80 ± 3μm anode pad
- Ceramic-submount and chip-on-submount development
- Six-emitter optical-axis and package-window alignment
- ESD-controlled assembly and test procedures
- Customer-specific laser-package evaluation
The package electrical path should be evaluated with the intended 35mA pulse driver. Die-attach quality, bond geometry, pulse waveform, electrical overshoot and package temperature can affect the measured result after the bare die is integrated.
Lens and Optical Module Integration
The six-emitter structure and rectangular footprint create a defined orientation reference for integrating the packaged source with external optics. Component-level optical work can include:
- Collimation-lens position evaluation
- Diffuser and beam-shaping development
- Package-window and lens-spacing tolerance analysis
- Machine-vision optical-source assemblies
- Sensor light-source modules
- Consumer-electronics and industrial optical-source integration
The datasheet specifies 21° typical beam divergence using the 1/e² definition at IF = 35mA. Final optical distribution should be measured after packaging because die position, package geometry, lens alignment and external optics are part of the completed source.
Downstream Application Development
The 1064nm 30mW VCSEL Bare Die can be evaluated as a component for machine-vision optical sources, sensor light sources, consumer-electronics optical assemblies, industrial optical-source modules and engineering prototypes that require the six-emitter 30mW configuration.
These directions describe possible component integration, not guaranteed finished-system performance. Working distance, received optical signal, field distribution, electrical safety, laser classification and regulatory status depend on the complete driver, package, optics, receiver where applicable and end-product design.
4. Evaluation Kit and Documentation Support
The 1064nm 30mW VCSEL Bare Die can be evaluated for rectangular-die placement, six-emitter package alignment, conductive die attachment, top-side wire bonding, 35mA QCW driver testing and ceramic-submount integration.
The Evaluation Kit includes 10 pcs / KIT per selected model:
- 1064nm 30mW VCSEL Bare Die
- Corresponding product datasheet
- Corresponding die-dimension documentation
- International shipping quoted according to destination
The following project requirements can be discussed:
- Center wavelength and wavelength tolerance
- Optical output and power-bin selection
- Six-emitter chip layout
- QCW current, pulse width and duty-cycle requirements
- Rectangular-die orientation and anode-pad access
- Die attachment, wire bonding and ceramic-submount design
- External lens and optical-module integration
- Evaluation quantity and volume-supply planning
For component-level project evaluation, an Initial Product Report covering the Laser Diode Series and VCSEL Laser Diode Chip Series has been filed with the U.S. FDA CDRH. This filing supports technical documentation and product evaluation.
For applicable products, CE, EMC, EN 60825, LVD, RoHS, REACH and halogen-free certification and compliance documents are available. Documentation depends on the corresponding product model and does not represent certification of the customer's finished device.
5. Frequently Asked Questions
FAQ 1. What test condition defines the 30mW output of the 1064nm six-emitter VCSEL bare die?
The datasheet specifies 25mW minimum and 30mW typical optical output at IF = 35mA and 25°C under QCW operation with a 0.5ms pulse width and 1% duty cycle. The 30mW value applies to this stated component test point and should not be treated as a continuous-wave rating or as guaranteed output after changing the pulse, temperature or package condition.
FAQ 2. How should the rectangular die and anode pad be oriented when packaging the 1064nm 30mW VCSEL bare die?
The six-emitter die measures 163 ± 10μm × 185 ± 10μm and is 130 ± 10μm thick. Its top anode pad measures 115 ± 3μm × 80 ± 3μm, while the backside cathode follows the full rectangular die footprint. Placement orientation, bond-tool access, backside contact, package-window alignment and ESD controls should be confirmed before fixtures or production tooling are released.
FAQ 3. When is the 1064nm 30mW six-emitter VCSEL bare die a better fit than the 20mW or 3W option?
Select the 30mW model when the project requires the higher-output member of the compact mW-level pair and can support its 35mA test point, six-emitter layout and rectangular die geometry. The 1064nm 20mW VCSEL Bare Die is characterized at 25mA and uses four emitters on a square die. The 1064nm 3W VCSEL Bare Die serves a separate watt-level requirement. The final decision should compare optical output, driver capability, footprint, pad geometry, package tolerances and downstream optics.
