940nm
940nm 1.5W VCSEL Bare Die
940nm 1.5W high-power VCSEL bare die with 280 emitters for pulsed NIR illumination, high-current packaging, thermal validation and optical modules.
Specifications
- Product Type
- Multi-mode VCSEL Bare Die
- Wavelength
- 940 nm typ.; 930–950 nm
- Optical Output Power
- 1.5W min. / 1.65W typ.
- Emitter Configuration
- 280 emitters
- Operating Mode
- QCW / Pulse
- Die Size
- 885±10μm × 810±10μm
- Recommended Assembly
- Die Attach / Wire Bonding / Ceramic Submount / Custom Packaging
1. 940nm 1.5W High-Power VCSEL Bare Die for NIR Packaging and Module Integration
The 940nm 1.5W High-Power VCSEL Bare Die is a multi-emitter, multi-mode VCSEL chip developed for high-current semiconductor packaging, ceramic-submount assembly and watt-level pulsed near-infrared optical-module integration. The device contains 280 emitters and provides 1.5W minimum and 1.65W typical optical output at IF = 2A under a QCW test condition at 25°C.
Its 885 ±10μm × 810 ±10μm die dimensions, 280-emitter array and watt-level optical output position this model for pulsed NIR illumination, high-output active sensing and custom optical-module development.
This high-power 940nm VCSEL bare die is intended for:
- OSAT semiconductor assembly and test providers
- High-current VCSEL and laser-diode packaging companies
- Die-attach and gold wire-bonding engineering teams
- Ceramic-submount and chip-on-submount integrators
- High-power NIR optical-module manufacturers
- Thermal-management and package-development teams
- Machine-vision and active-illumination companies
- Industrial optical-source and inspection companies
- Lens, diffuser and beam-shaping companies
- Laser-component distributors and second-source development teams
As an unpackaged semiconductor die, this product requires suitable die attachment, wire bonding, electrical driving, package protection, thermal management and optical integration. It is not supplied as a finished SMD device, COB source, packaged laser or complete optical module.
2. Optical Configuration and Packaging Direction
The 940nm 1.5W High-Power VCSEL Bare Die uses a 280-emitter array for watt-level pulsed near-infrared source development. Its electrical, optical and mechanical parameters must be evaluated under the stated QCW condition, drive current, pulse width, duty cycle and temperature.
Parameter | Value |
|---|---|
Optical Output Power | 1.5W min. / 1.65W typ. at IF = 2A |
Center Wavelength | 940nm typ. |
Specified Wavelength Range | 930nm min. / 940nm typ. / 950nm max. |
Operating Condition | QCW, 0.5ms pulse width, 1% duty cycle, 25°C |
Emitter Configuration | 280 emitters |
Forward Voltage | 1.9V min. / 2.1V typ. / 2.3V max. at IF = 2A |
Threshold Current | 250mA typ. / 340mA max. |
Differential Resistance | 0.3Ω typ. |
Slope Efficiency | 0.9W/A min. / 1.0W/A typ. |
Power Conversion Efficiency | 38% min. / 40% typ. at IF = 2A |
Beam Divergence | 18° min. / 21° typ. / 24° max. at 1/e² |
Die Size | 885 ±10μm × 810 ±10μm |
Die Thickness | 150 ±10μm |
Anode Pad Size | 95 ±5μm × 830 ±5μm |
Backside Cathode Area | 885 ±10μm × 810 ±10μm |
The device can be evaluated for conductive die attachment, gold wire bonding, high-current ceramic-submount assembly, chip-on-submount integration and application-specific laser packages. Package design should account for the large die area, elongated anode pad, backside cathode, die-attach material, bond-wire current capacity, thermal path and optical alignment.
The stated 1.65W typical value is a component-level test result under the specified QCW condition. It should not be interpreted as a continuous-wave output rating. Final optical output, wavelength, package temperature and reliability depend on the completed package, driver, pulse condition, die attachment, thermal path, optics and module architecture.
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3. Packaging, Optical Module and Application Development
OSAT and Custom High-Power VCSEL Packaging
The 940nm 1.5W High-Power VCSEL Bare Die supports large-area die attachment, gold wire bonding, ceramic-submount assembly and custom semiconductor-laser package development. Applicable packaging directions include:
- Large-area VCSEL die attachment and bond-line evaluation
- Gold wire-bonding process development
- High-current ceramic-submount assembly
- Chip-on-submount high-output optical sources
- Application-specific laser packages
- Custom VCSEL array packaging
- Pulsed NIR optical-source development
- High-power NIR optical modules
The 280-emitter array, 2A test current and watt-level pulsed output require suitable current delivery, bond configuration and a controlled heat-dissipation path. Die-attach material, ceramic substrate, package protection, electrical interconnect and thermal behavior must be validated under the intended pulse conditions.
Lens and Optical Module Integration
The device can support optical companies and module-development teams working on integrated high-output 940nm near-infrared sources using:
- Collimation-lens assemblies
- Diffuser-integrated high-output optical sources
- Beam-shaping and homogenization components
- Lens-integrated ceramic packages
- Pulsed NIR illumination modules
- Machine-vision auxiliary sources
- Application-specific optical assemblies
Optical integration should be validated using the actual far-field distribution, 21° typical beam divergence, emitter-array dimensions, package position, lens spacing, diffuser characteristics and complete module architecture. A typical divergence value alone does not define the final spot size, irradiance distribution or usable optical field.
Downstream Application Development
The 940nm 1.5W High-Power VCSEL Bare Die can support component-level development and engineering evaluation for:
- Watt-level near-infrared illumination
- Active optical detection
- Machine-vision support illumination
- Industrial optical-source assemblies
- Industrial inspection systems
- Pulsed active-sensing modules
- Thermal and high-current packaging evaluation
- Engineering and research optical sources
- Custom high-output VCSEL modules
These are downstream development directions after the bare die has been integrated into a suitable electrical, thermal, mechanical and optical system. The VCSEL bare die is not a finished sensing or illumination device and does not independently establish system performance, laser-safety classification or regulatory approval.
The finished-device developer must independently validate the driver condition, optical output, package temperature, beam distribution, working distance, laser classification, electrical safety and complete-system requirements.
4. Evaluation Kit and Documentation Support
The 940nm 1.5W High-Power VCSEL Bare Die can be evaluated for large-area die-attach trials, wire-bonding verification, ceramic-submount development, high-current pulsed driver testing, thermal-path evaluation and initial optical-module integration.
The Evaluation Kit includes 10 pcs / KIT per selected model:
- 940nm 1.5W High-Power VCSEL Bare Die
- Corresponding product datasheet
- Corresponding die-dimension documentation
- International shipping quoted according to destination
The following requirements can be discussed according to the project:
- Center wavelength and wavelength tolerance
- Optical output and power-bin selection
- Emitter configuration and chip layout
- High-current QCW driver and pulse requirements
- Die attachment, wire bonding and ceramic-submount design
- Thermal path and package configuration
- Lens, diffuser and optical-module integration
- Volume-supply requirements
For component-level project evaluation, an Initial Product Report covering the Laser Diode Series and VCSEL Laser Diode Chip Series has been filed with the U.S. FDA CDRH. This filing supports technical documentation and product evaluation.
For applicable products, CE, EMC, EN 60825, LVD, RoHS, REACH and halogen-free certification and compliance documents are available. Documentation depends on the corresponding product model and does not represent certification of the customer's finished device.
5. Frequently Asked Questions
FAQ 1. What packaging and operating conditions are required for the 940nm 1.5W VCSEL Bare Die?
The device is supplied as an unpackaged semiconductor die and requires conductive die attachment, top-side wire bonding, ESD-controlled handling, package-level protection and a suitable thermal path. Its 1.65W typical optical output is measured at IF = 2A, 25°C, a 0.5ms pulse width and 1% duty cycle. The package should provide reliable backside cathode contact, suitable access to the elongated anode pad, sufficient bond-wire current capacity and optical alignment. Different operating conditions require separate electrical, optical and thermal validation.
FAQ 2. When should I select the 940nm 1.5W device instead of the 800mW or 8W model?
The 1.5W model is suitable when the project requires watt-level pulsed output and can support its 280-emitter array, 2A test current and larger die. The 800mW device may be more appropriate when lower current, lower thermal load or reduced output is required. The 8W model is intended for projects requiring substantially higher pulsed output and a more demanding electrical, bonding and thermal package structure. Selection should be based on required output, drive capability and package architecture.
FAQ 3. Can the 940nm 1.5W VCSEL Bare Die be evaluated for high-output illumination and optical modules?
Yes. The device can support component-level evaluation for watt-level pulsed NIR illumination, active optical detection, machine-vision support and custom high-output optical modules. Engineering evaluation should cover the stated QCW condition, optical output, beam divergence, package geometry, die-attach quality, bond-wire current capacity, lens or diffuser position and thermal behavior. The bare die is not a complete optical system and does not independently determine irradiance distribution, optical safety or finished-product performance.
